N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK onsemi NTBG080N120SC1
- RS Stock No.:
- 205-2450
- Mfr. Part No.:
- NTBG080N120SC1
- Manufacturer:
- onsemi
760 In stock for delivery within 2 working days
Added
Price Each
€11.77
(exc. VAT)
€14.48
(inc. VAT)
| Units | Per unit |
| 1 - 9 | €11.77 |
| 10 - 99 | €10.14 |
| 100 - 249 | €10.02 |
| 250 - 499 | €9.88 |
| 500 + | €9.54 |
- RS Stock No.:
- 205-2450
- Mfr. Part No.:
- NTBG080N120SC1
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
High Junction temperature
Ultra low gate charge
Low effective output capacitance
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 110 mΩ |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |