N-Channel MOSFET, 2.6 A, 200 V, 3-Pin IPAK Vishay IRFU210PBF

Discontinued product

Technical data sheets

MOSFET Transistors, Vishay Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.6 A
Maximum Drain Source Voltage	200 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.5 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	2.38mm
Length	6.73mm
Typical Gate Charge @ Vgs	8.2 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Height	6.22mm
Minimum Operating Temperature	-55 °C