Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC Vishay SI9933CDY-T1-GE3

RS Stock No.:: 710-3395P
Mfr. Part No.:: SI9933CDY-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC Vishay SI9933CDY-T1-GE3

Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

€0.51

(exc. VAT)

€0.63

(inc. VAT)

Temporarily out of stock - back order for despatch 20-04-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
5 +	€0.51

**price indicative

RS Stock No.:: 710-3395P
Mfr. Part No.:: SI9933CDY-T1-GE3
Manufacturer:: Vishay

Trans MOSFET P-CH 20V 4A
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	20 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	58 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	17 nC @ 10 V, 8 nC @ 4.5 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Transistor Material	Si
Minimum Operating Temperature	-50 °C
Height	1.55mm

Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC Vishay SI9933CDY-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor