FDC610PZ P-Channel MOSFET, 4.9 A, 30 V PowerTrench, 6-Pin SOT-23 ON Semiconductor

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Product Details

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Attribute Value
Channel Type P
Maximum Continuous Drain Current 4.9 A
Maximum Drain Source Voltage 30 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 75 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.6 W
Transistor Configuration Single
Maximum Gate Source Voltage -25 V, +25 V
Number of Elements per Chip 1
Transistor Material Si
Height 1mm
Series PowerTrench
Maximum Operating Temperature +150 °C
Length 3mm
Width 1.7mm
Typical Gate Charge @ Vgs 17 nC @ 10 V
Minimum Operating Temperature -55 °C
1300 In stock for delivery within 2 working days
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3000 - 5980
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