Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

RS Stock No.:: 780-0614P
Mfr. Part No.:: NTJD4158CT1G
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

Bulk discount available

Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

€0.153

(exc. VAT)

€0.188

(inc. VAT)

Temporarily out of stock - back order for despatch 06-04-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
100 - 225	€0.132
250 - 475	€0.115
500 - 975	€0.101
1000 +	€0.092

**price indicative

RS Stock No.:: 780-0614P
Mfr. Part No.:: NTJD4158CT1G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	250 mA, 880 mA
Maximum Drain Source Voltage	20 V, 30 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	2.5 Ω, 500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	270 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -12 V, +12 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	2.2mm
Number of Elements per Chip	2
Width	1.35mm
Typical Gate Charge @ Vgs	0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

Dual N/P-Channel MOSFET, ON Semiconductor