N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK Infineon IPD33CN10NG

RS Stock No.:: 827-5066P
Mfr. Part No.:: IPD33CN10NGBUMA1
Manufacturer:: Infineon

N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK Infineon IPD33CN10NG

Bulk discount available

Subtotal (10 reels of 25 units)**. Quantities below 150 on continuous strip

€94.25

(exc. VAT)

€116.00

(inc. VAT)

999999 In stock for delivery within 1 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
250 - 475	€0.33
500 +	€0.293

**price indicative

RS Stock No.:: 827-5066P
Mfr. Part No.:: IPD33CN10NGBUMA1
Manufacturer:: Infineon

IPB34CN10N, IPD33CN10N, IPI35CN10N, IPP35CN10N-G OptiMOS2 Power-Transistor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	27 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS 2
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	35 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	58 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Width	6.223mm
Typical Gate Charge @ Vgs	18 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	6.73mm
Height	2.413mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK Infineon IPD33CN10NG

Infineon OptiMOS™2 Power MOSFET Family