N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor 2N7000-D26Z

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 9 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 400 mW
Transistor Configuration Single
Maximum Gate Source Voltage -40 V, +40 V
Number of Elements per Chip 1
Length 5.2mm
Height 5.33mm
Width 4.19mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
2800 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 100)
0.10
(exc. VAT)
0.12
(inc. VAT)
units
Per unit
Per Pack*
100 - 400
€0.10
€10.00
500 - 900
€0.092
€9.20
1000 - 1900
€0.087
€8.70
2000 - 3900
€0.085
€8.50
4000 +
€0.084
€8.40
*price indicative
Packaging Options:
Related Products
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, ...
Description:
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion ...
60V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect ...
Description:
60V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV ...
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS ...
Description:
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS ...
2N7000 is an enhancement-mode (normally-off) transistor that utilizes ...
Description:
2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient ...