2N7000-D26Z N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Advanced Power MOSFET, Fairchild Semiconductor

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 9 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 400 mW
Transistor Configuration Single
Maximum Gate Source Voltage -40 V, +40 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4.19mm
Maximum Operating Temperature +150 °C
Length 5.2mm
Transistor Material Si
Height 5.33mm
3200 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 100)
0.108
(exc. VAT)
0.133
(inc. VAT)
units
Per unit
Per Pack*
100 - 400
€0.108
€10.80
500 - 900
€0.099
€9.90
1000 - 1900
€0.094
€9.40
2000 - 3900
€0.092
€9.20
4000 +
€0.09
€9.00
*price indicative
Packaging Options:
Related Products
These N-channel Small Signal MOSFETs are produced using ...
Description:
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications ...
Power Trench® MOSFETs are optimised power switches that ...
Description:
Power Trench® MOSFETs are optimised power switches that offer increase of system efficiency and power density They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in ...
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.