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N-Channel MOSFET Transistor, 39 A, 30 V, 8-Pin TDSON Infineon BSC120N03LSGATMA1


10000 In stock for delivery within 2 working days
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RS Stock No.:
911-4852
Mfr. Part No.:
BSC120N03LSGATMA1
Manufacturer:
Infineon
COO (Country of Origin):
DE
unitsPer unitPer Reel*
5000 +€0.139€695.00
*price indicative

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.


Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

AttributeValue
Channel TypeN
Maximum Continuous Drain Current39 A
Maximum Drain Source Voltage30 V
Package TypeTDSON
Mounting TypeSurface Mount
Pin Count8
Maximum Drain Source Resistance16.5 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage2.2V
Minimum Gate Threshold Voltage1V
Maximum Power Dissipation2.5 W
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip1
Typical Gate Charge @ Vgs11 nC @ 10 V
Length6.35mm
Maximum Operating Temperature+150 °C
Width5.35mm
SeriesOptiMOS 3
Height1.1mm
Minimum Operating Temperature-55 °C