N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Manufacturer:
- Vishay
200 In stock for delivery within 2 working days
Added
Price Each (In a Tube of 100)
€1.06
(exc. VAT)
€1.30
(inc. VAT)
| Units | Per unit | Per Tube* |
| 100 - 100 | €1.06 | €106.00 |
| 200 - 400 | €0.997 | €99.70 |
| 500 + | €0.901 | €90.10 |
| *price indicative | ||
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Manufacturer:
- Vishay
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• TrenchFET® power MOSFET
• Package with low thermal resistance
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 540 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 6.29mm |
| Length | 5mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 3.37mm |