NCP51820AMNTWG Power Switch ICs

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.

Attribute Value
Power Switch Type High Side, Low Side
Number of Channels 2
Maximum Operating Supply Voltage 17 V
Maximum Operating Current 2.5mA
Mounting Type Surface Mount
Package Type QFN
Pin Count 15
Maximum Operating Temperature +150 °C
Dimensions 4.05 x 4.05 x 0.85mm
3980 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 10)
(exc. VAT)
(inc. VAT)
Per unit
Per Pack*
10 - 90
100 - 490
500 - 990
1000 - 1990
2000 +
*price indicative
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