onsemi FDG328P Digital Transistor, 6-Pin SC-70

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).

-1.5 A, -20 V
RDS(ON) = 0.145Ω @ VGS = -4.5 V
RDS(ON) = 0.210Ω @ VGS = -2.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
Compact industry standard SC70-6 surface mount package
Applications
This product is general usage and suitable for many different applications.