Infineon BFR340FH6327XTSA1 NPN RF Bipolar Transistor, 20 mA, 15 V, 3-Pin TSFP-3-1

The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and high breakdown voltage characteristics make the device suitable for oscillators applications for frequencies as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.

Low noise amplifiers for FM and AM radio
Minimum noise figure