Fuji Electric 7MBR75VB-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 24-Pin M712, Through Hole
- RS Stock No.:
- 110-9137
- Mfr. Part No.:
- 7MBR75VB-120-50
- Manufacturer:
- Fuji Electric
Discontinued product
- RS Stock No.:
- 110-9137
- Mfr. Part No.:
- 7MBR75VB-120-50
- Manufacturer:
- Fuji Electric
Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 385 W |
| Configuration | 3 Phase Bridge |
| Package Type | M712 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 24 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 110-9137
- Mfr. Part No.:
- 7MBR75VB-120-50
- Manufacturer:
- Fuji Electric