- RS Stock No.:
- 194-899
- Mfr. Part No.:
- IXGH32N170
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 18-12-2024, delivery within 2 working days
Added
Price Each
€30.14
(exc. VAT)
€37.07
(inc. VAT)
Units | Per unit |
1 - 4 | €30.14 |
5 - 19 | €25.95 |
20 - 49 | €24.87 |
50 - 99 | €22.54 |
100 + | €21.97 |
- RS Stock No.:
- 194-899
- Mfr. Part No.:
- IXGH32N170
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1700 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247AD |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 194-899
- Mfr. Part No.:
- IXGH32N170
- Manufacturer:
- IXYS