Renesas Electronics RJP4010AGE-01#P5 IGBT, 150 (Pulse) A 400 V, 8-Pin TSOJ

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 150 (Pulse) A
Maximum Collector Emitter Voltage 400 V
Maximum Gate Emitter Voltage ±6V
Maximum Power Dissipation 1.6 W
Package Type TSOJ
Mounting Type Surface Mount
Channel Type N
Pin Count 8
Transistor Configuration Single
Length 3.1mm
Width 2.5mm
Height 1mm
Dimensions 3.1 x 2.5 x 1mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
Gate Capacitance 5100pF
28 Within 2 working day(s) (EU stock)
72 Within 5 working day(s) (EU stock)
Unit of sale: Each (In a Pack of 4)
1.215
(exc. VAT)
1.494
(inc. VAT)
units
Per unit
Per Pack*
4 - 36
€1.215
€4.86
40 - 76
€1.00
€4.00
80 - 196
€0.91
€3.64
200 - 396
€0.858
€3.432
400 +
€0.838
€3.352
*price indicative
Packaging Options:
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