ON Semiconductor NGTB40N120FL3WG IGBT, 160 A 1200 V, 3-Pin TO-247

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 160 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 454 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 16.25mm
Width 5.3mm
Height 21.4mm
Dimensions 16.25 x 5.3 x 21.4mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Gate Capacitance 4912pF
140 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 2)
5.93
(exc. VAT)
7.29
(inc. VAT)
units
Per unit
Per Pack*
2 - 8
€5.93
€11.86
10 - 48
€4.875
€9.75
50 - 98
€4.55
€9.10
100 - 248
€4.24
€8.48
250 +
€4.01
€8.02
*price indicative
Packaging Options:
Related Products
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring Trench Stop™ technology The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 1100 to 1600V• Very ...
Discrete IGBT transistors from Infineon offer various technologies ...
Description:
Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
Optimised IGBTs designed for medium frequency applications with ...
Description:
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available These devices utilise FRED diodes optimised to provide the best performance with IGBTs.