ON Semiconductor NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247
- RS Stock No. 145-3284
- Mfr. Part No. NGTB25N120FL3WG
- Manufacturer ON Semiconductor
Technical data sheets
Legislation and Compliance
COO (Country of Origin): CN
Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 349 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Length | 16.25mm |
| Width | 5.3mm |
| Height | 21.4mm |
| Dimensions | 16.25 x 5.3 x 21.4mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 3085pF |
2400 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 30)
€
3.913
(exc. VAT)
€
4.813
(inc. VAT)
units
Per unit
Per Tube*
30 +
€3.913
€117.39
*price indicative
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