Infineon IKZ50N65ES5XKSA1 P-Channel IGBT, 80 A 650 V, 4-Pin TO-247

  • RS Stock No. 162-3289
  • Mfr. Part No. IKZ50N65ES5XKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

Very low control inductance loop
Extra emitter pin, the forth package pin, for driver feedback
Same creepage distance of collector emitter as standard TO-247 package
Over 20% total switching loses reduction compared to standard TO-247-3
System efficiency improvement or power density increase compared to standard TO-247-3

Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Number of Transistors 1
Maximum Power Dissipation 274 W
Package Type TO-247
Mounting Type Through Hole
Channel Type P
Pin Count 4
Switching Speed 40kHz
Transistor Configuration Single
Length 15.9mm
Width 5.1mm
Height 22.5mm
Dimensions 15.9 x 5.1 x 22.5mm
Energy Rating 1.65
Maximum Operating Temperature +175 °C
Gate Capacitance 3100pF
Minimum Operating Temperature -40 °C
210 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 30)
(exc. VAT)
(inc. VAT)
Per unit
Per Tube*
30 +
*price indicative
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