Infineon IKY40N120CH3XKSA1 P-Channel IGBT, 80 A 1200 V, 4-Pin TO-247

  • RS Stock No. 162-3314
  • Mfr. Part No. IKY40N120CH3XKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses Ets.

Extremely low control inductance loop with extra emitter pin for driver feedback
20% reduction in total switching losses compared to 3pin package using same technology
Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
Highest efficiency with lowest switching losses 1200 V IGBT
High power density 1200V discrete IGBT
Lower thermal resistance

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 500 W
Number of Transistors 1
Package Type TO-247
Mounting Type Through Hole
Channel Type P
Pin Count 4
Switching Speed 60kHz
Transistor Configuration Single
Length 15.9mm
Width 5.1mm
Height 22.5mm
Dimensions 15.9 x 5.1 x 22.5mm
Minimum Operating Temperature -40 °C
Gate Capacitance 2385pF
Energy Rating 3.48
Maximum Operating Temperature +175 °C
Temporarily out of stock - back order for despatch 12-05-2020, delivery within 2 working days
Unit of sale: Each
7.97
(exc. VAT)
9.80
(inc. VAT)
units
Per unit
1 - 9
€7.97
10 - 19
€7.33
20 +
€6.80
Packaging Options:
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