onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 181-1929
- Mfr. Part No.:
- FGH75T65SQDNL4
- Manufacturer:
- onsemi
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Added
Price Each
€9.21
(exc. VAT)
€11.33
(inc. VAT)
| Units | Per unit |
| 1 - 9 | €9.21 |
| 10 - 99 | €8.20 |
| 100 - 249 | €5.74 |
| 250 - 499 | €5.57 |
| 500 + | €5.39 |
- RS Stock No.:
- 181-1929
- Mfr. Part No.:
- FGH75T65SQDNL4
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 200 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5.2 x 22.74mm |
| Gate Capacitance | 5100pF |
| Minimum Operating Temperature | -55 °C |
| Energy Rating | 160mJ |
| Maximum Operating Temperature | +175 °C |