ON Semiconductor FGH75T65SQDNL4 P-Channel IGBT, 200 A 650 V, 4-Pin TO-247

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology

Specifications
Attribute Value
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 375 W
Number of Transistors 1
Package Type TO-247
Mounting Type Through Hole
Channel Type P
Pin Count 4
Switching Speed 1MHz
Transistor Configuration Single
Length 15.8mm
Width 5.2mm
Height 22.74mm
Dimensions 15.8 x 5.2 x 22.74mm
Gate Capacitance 5100pF
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Energy Rating 160µJ
408 In stock for delivery within 2 working days
Unit of sale: Each
9.20
(exc. VAT)
11.32
(inc. VAT)
units
Per unit
1 - 9
€9.20
10 - 49
€8.20
50 - 99
€7.40
100 - 249
€6.70
250 +
€6.00
Packaging Options:
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