onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

RS Stock No.:: 245-6974P
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Manufacturer:: onsemi

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

Price Each (Supplied in a Tray)**

€160.61

(exc. VAT)

€197.55

(inc. VAT)

36 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 +	€160.61

**price indicative

RS Stock No.:: 245-6974P
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Manufacturer:: onsemi

Datasheet - NXH350N100H4Q2F2P1G

Attribute	Value
Maximum Continuous Collector Current	303 A
Maximum Collector Emitter Voltage	1000 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	592 W
Number of Transistors	4
Package Type	Q2PACK (Pb-Free/Halide-Free)

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins