ON Semiconductor FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 349 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.6mm
Width 4.7mm
Height 20.6mm
Dimensions 15.6 x 4.7 x 20.6mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
92 In stock for delivery within 2 working days
Unit of sale: Each
3.25
(exc. VAT)
4.00
(inc. VAT)
units
Per unit
1 - 5
€3.25
6 - 14
€3.08
15 +
€2.76
Packaging Options:
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