Renesas NE3510M04-A N-Channel JFET, 4 V, Idss 42 → 97mA, 4-Pin MO4
- RS Stock No.:
- 772-5911P
- Mfr. Part No.:
- NE3510M04-A
- Manufacturer:
- Renesas Electronics
Bulk discount available
Subtotal 40 units (supplied in a tube)*
€39.76
(exc. VAT)
€48.92
(inc. VAT)
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Units | Per unit |
|---|---|
| 40 - 190 | €0.994 |
| 200 - 490 | €0.885 |
| 500 - 990 | €0.771 |
| 1000 + | €0.644 |
*price indicative
- RS Stock No.:
- 772-5911P
- Mfr. Part No.:
- NE3510M04-A
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 42 → 97mA | |
| Maximum Drain Source Voltage | 4 V | |
| Maximum Gate Source Voltage | -3 V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | MO4 | |
| Pin Count | 4 | |
| Dimensions | 2 x 1.25 x 0.59mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.25mm | |
| Length | 2mm | |
| Height | 0.59mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 42 → 97mA | ||
Maximum Drain Source Voltage 4 V | ||
Maximum Gate Source Voltage -3 V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type MO4 | ||
Pin Count 4 | ||
Dimensions 2 x 1.25 x 0.59mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.25mm | ||
Length 2mm | ||
Height 0.59mm | ||
- COO (Country of Origin):
- JP
N-Channel HEMT, Renesas
A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.