N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXYS IXFH110N10P
- RS Stock No.:
- 193-492
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 21-10-2024, delivery within 2 working days
Added
Price Each
€7.28
(exc. VAT)
€8.95
(inc. VAT)
| Units | Per unit |
| 1 - 4 | €7.28 |
| 5 - 19 | €6.81 |
| 20 - 49 | €6.39 |
| 50 - 99 | €4.73 |
| 100 + | €4.63 |
- RS Stock No.:
- 193-492
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 100 V |
| Series | HiperFET, Polar |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 480 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 5.3mm |
| Length | 16.26mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 21.46mm |
- RS Stock No.:
- 193-492
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS