N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRLD110PBF

RS Stock No.:: 301-338P
Mfr. Part No.:: IRLD110PBF
Manufacturer:: Vishay

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRLD110PBF

3335 In stock for delivery within 2 working days

Price Each (Supplied in a Tube)

€1.252

(exc. VAT)

€1.54

(inc. VAT)

Units	Per unit
50 - 120	€1.252
125 - 245	€1.192
250 - 495	€1.12
500 +	€1.038

RS Stock No.:: 301-338P
Mfr. Part No.:: IRLD110PBF
Manufacturer:: Vishay

IRLD110PBF Transistor MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1 A
Maximum Drain Source Voltage	100 V
Package Type	HVMDIP
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	540 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	5mm
Width	6.29mm
Typical Gate Charge @ Vgs	6.1 nC @ 5 V
Number of Elements per Chip	1
Height	3.37mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRLD110PBF

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor