IRLD110PBF N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay

  • RS Stock No. 301-338P
  • Mfr. Part No. IRLD110PBF
  • Manufacturer Vishay
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

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MOSFET Transistors, Vishay Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1 A
Maximum Drain Source Voltage 100 V
Package Type HVMDIP
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 540 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.3 W
Transistor Configuration Single
Maximum Gate Source Voltage -10 V, +10 V
Number of Elements per Chip 1
Height 3.37mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 6.1 nC @ 5 V
Transistor Material Si
Maximum Operating Temperature +175 °C
Length 5mm
Width 6.29mm
1145 In stock for delivery within 2 working days
Unit of sale: Each (Supplied in a Tube)
0.722
(exc. VAT)
0.888
(inc. VAT)
units
Per unit
50 - 95
€0.722
100 - 245
€0.562
250 - 495
€0.534
500 +
€0.436
Packaging Options: