ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

RS Stock No.:: 687-380
Mfr. Part No.:: RQ3P120BKFRATCB
Manufacturer:: ROHM

ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

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Subtotal (1 tape of 2 units)*

€3.55

(exc. VAT)

€4.366

(inc. VAT)

In Stock

100 unit(s) ready to ship from another location

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Units	Per unit	Per Tape*
2 - 18	€1.775	€3.55
20 - 48	€1.56	€3.12
50 - 198	€1.41	€2.82
200 - 998	€1.13	€2.26
1000 +	€1.11	€2.22

*price indicative

RS Stock No.:: 687-380
Mfr. Part No.:: RQ3P120BKFRATCB
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	100V
	Series	RQ3P120BKFRA
	Package Type	HSMT-8AG
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.9nC
	Maximum Power Dissipation Pd	40W
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	0.9mm
	Length	3.30mm
	Width	300 mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 100V
	Series RQ3P120BKFRA
	Package Type HSMT-8AG
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.9nC
	Maximum Power Dissipation Pd 40W
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 0.9mm
	Length 3.30mm
	Width 300 mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - RQ3P120BKFRATCB

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.

Small high-powered package optimises space on PCBs by 64%

High mounting reliability achieved through innovative terminal and plating treatments

AEC Q101 qualification ensures reliability in automotive applications

Designed to handle a maximum power dissipation of 40W for effective thermal management

Low on-state resistance of 58mΩ enhances efficiency and performance

Robust gate-source voltage tolerance of ±20V expands integration possibilities

Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation

Highly reliable operation across a temperature range of -55 to +150°C

ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

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