STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG
- RS Stock No.:
- 719-469
- Mfr. Part No.:
- SCT019W120G3-4AG
- Manufacturer:
- STMicroelectronics
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€19.67
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€24.19
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Units | Per unit |
|---|---|
| 1 - 4 | €19.67 |
| 5 + | €19.08 |
*price indicative
- RS Stock No.:
- 719-469
- Mfr. Part No.:
- SCT019W120G3-4AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT019 | |
| Package Type | Hip-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 486W | |
| Forward Voltage Vf | 2.8V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Operating Temperature | 200°C | |
| Length | 21.1mm | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT019 | ||
Package Type Hip-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 486W | ||
Forward Voltage Vf 2.8V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Operating Temperature 200°C | ||
Length 21.1mm | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency