Vishay SiR N channel-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5800DP

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€3.40

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€4.18

(inc. VAT)

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1 - 9€3.40
10 - 49€2.10
50 - 99€1.63
100 +€1.20

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RS Stock No.:
735-133
Mfr. Part No.:
SiRS5800DP
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK SO-8S

Series

SiR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0018Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

81nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

80V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

240W

Maximum Operating Temperature

150°C

Width

5mm

Standards/Approvals

RoHS

Length

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, optimized for low-loss synchronous rectification in AI power server buck converters. It achieves industry-leading on-resistance of 1.8mΩ maximum at 10V gate drive for superior efficiency under high load conditions.

265A pulsed drain current rating

81nC typical total gate charge

52°C/W thermal resistance junction-to-case