STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET, 44 A, 650 V N, 5-Pin PowerFlat HV ST8L65N065DM9
- RS Stock No.:
- 762-552
- Mfr. Part No.:
- ST8L65N065DM9
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
€5.42
(exc. VAT)
€6.67
(inc. VAT)
Temporarily out of stock
- Shipping from 01 July 2026
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Units | Per unit |
|---|---|
| 1 - 9 | €5.42 |
| 10 - 24 | €5.26 |
| 25 - 99 | €5.16 |
| 100 - 499 | €4.40 |
| 500 + | €4.12 |
*price indicative
- RS Stock No.:
- 762-552
- Mfr. Part No.:
- ST8L65N065DM9
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFlat HV | |
| Series | ST8L65N0 | |
| Mount Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 223W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFlat HV | ||
Series ST8L65N0 | ||
Mount Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 223W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested