Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules, 395 A, 1200 V Enhancement, 15-Pin AG-62MMHB

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Subtotal (1 unit)*

€873.25

(exc. VAT)

€1,074.10

(inc. VAT)

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RS Stock No.:
762-897
Mfr. Part No.:
FF1MR12KM1HSHPSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N channel

Product Type

MOSFET Modules

Maximum Continuous Drain Current Id

395A

Maximum Drain Source Voltage Vds

1200V

Package Type

AG-62MMHB

Series

XHP 2

Mount Type

Screw

Pin Count

15

Maximum Drain Source Resistance Rds

2.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2300W

Maximum Gate Source Voltage Vgs

-23V

Forward Voltage Vf

6.25V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

1.6μC

Maximum Operating Temperature

125°C

Transistor Configuration

Half Bridge

Width

61.4mm

Length

106.4mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
HU
The Infineon CoolSiC Trench MOSFET half bridge module features voltage rating of 1200 V and supports high current density. It is suitable for UPS systems, DC/DC converter, High-frequency switching application, Solar applications, Energy storage systems (ESS), and DC charger for EV.

Low switching losses

High current density

Qualified for industrial applications

4 kV AC 1 min insulation

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