N-Channel MOSFET, 37 A, 600 V, 3-Pin TO-247 onsemi FCH104N60F
- RS Stock No.:
- 124-1459
- Mfr. Part No.:
- FCH104N60F
- Manufacturer:
- onsemi
Discontinued product
- RS Stock No.:
- 124-1459
- Mfr. Part No.:
- FCH104N60F
- Manufacturer:
- onsemi
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 37 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247 |
| Series | SuperFET II |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 104 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 357 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 15.87mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 107 nC @ 10 V |
| Width | 4.82mm |
| Minimum Operating Temperature | -55 °C |
| Height | 20.82mm |