IPN60R1K0CEATMA1 N-Channel MOSFET, 6.8 A, 650 V CoolMOS CE, 3+Tab-Pin SOT-223 Infineon

  • RS Stock No. 130-0917
  • Mfr. Part No. IPN60R1K0CEATMA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 6.8 A
Maximum Drain Source Voltage 650 V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 1 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 5 W
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Series CoolMOS CE
Width 3.7mm
Height 1.7mm
Typical Gate Charge @ Vgs 13 nC @ 10 V
Length 6.7mm
Maximum Operating Temperature +150 °C
Forward Diode Voltage 0.9V
Minimum Operating Temperature -40 °C
1625 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 25)
0.18
(exc. VAT)
0.22
(inc. VAT)
units
Per unit
Per Pack*
25 +
€0.18
€4.50
*price indicative
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