N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5IATMA1
- RS Stock No.:
- 133-9881
- Mfr. Part No.:
- BSC009NE2LS5IATMA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 05-05-2025, delivery within 2 working days
Added
Price Each (In a Pack of 5)
€2.25
(exc. VAT)
€2.77
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 20 | €2.25 | €11.25 |
| 25 - 45 | €2.002 | €10.01 |
| 50 - 120 | €1.868 | €9.34 |
| 125 - 245 | €1.756 | €8.78 |
| 250 + | €1.62 | €8.10 |
| *price indicative | ||
- RS Stock No.:
- 133-9881
- Mfr. Part No.:
- BSC009NE2LS5IATMA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SuperSO8 5 x 6 |
| Series | OptiMOS 5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 1.35 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 74 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +16 V |
| Number of Elements per Chip | 1 |
| Width | 6.35mm |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V |
| Length | 5.49mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 0.62V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |
- RS Stock No.:
- 133-9881
- Mfr. Part No.:
- BSC009NE2LS5IATMA1
- Manufacturer:
- Infineon