N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Infineon IRL6342TRPBF

RS Stock No.:: 145-9570
Mfr. Part No.:: IRL6342TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Infineon IRL6342TRPBF

Subtotal (1 reel of 4000 units)**

€728.00

(exc. VAT)

€896.00

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
4000 +	€0.182	€728.00

**price indicative

RS Stock No.:: 145-9570
Mfr. Part No.:: IRL6342TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.9A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRL6342TRPBF

This N-channel MOSFET delivers solid performance for a range of electronic applications, capable of continuous drain current up to 9.9A and a drain-source voltage of 30V. It operates over a temperature range of -55°C to +150°C, making it suitable for both general and high-performance environments.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency
• Low on-resistance for reduced power losses
• Surface-mounted design for straightforward installation
• High-temperature operation improves reliability in various tasks
• Compliant with RoHS for environmentally conscious applications
• Supports enhancement mode operation for accurate control

Applications

• Suitable for power supply circuits
• Applicable in motor control systems
• Effective in battery management
• Ideal for diverse switching power

What are the maximum ratings for the device?

The device supports a maximum drain-to-source voltage of 30 V and a gate-to-source voltage of ±12V.

How does it perform in high-temperature environments?

It operates efficiently within a range of -55°C to +150°C, fitting for various applications.

Is it compatible with standard PCB layouts?

Yes, the surface mount design facilitates easy integration into standard PCB layouts.

What is the advantage of using a low-resistance MOSFET?

A low on-resistance of up to 19 mΩ minimises power loss, enhancing overall efficiency.

How do I ensure proper installation?

Adhere to standard surface-mount techniques, ensuring correct alignment and soldering to prevent performance issues.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.9 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	19 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Transistor Material	Si
	Typical Gate Charge @ Vgs	11 nC @ 4.5 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Length	5mm
	Width	4mm
	Height	1.5mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Select all
	Manufacturer Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.9 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 19 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Transistor Material Si
	Typical Gate Charge @ Vgs 11 nC @ 4.5 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Length 5mm
	Width 4mm
	Height 1.5mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C