Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

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Subtotal 250 units (supplied on a reel)*

€74.50

(exc. VAT)

€91.75

(inc. VAT)

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Last RS stock
  • Final 75 unit(s), ready to ship from another location

Units
Per unit
250 - 600€0.298
625 - 1225€0.27
1250 - 2475€0.254
2500 +€0.238

*price indicative

Packaging Options:
RS Stock No.:
152-6358P
Mfr. Part No.:
SI2302DDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

0.86W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

IEC 61249-2-21, RoHS

Length

3.04mm

Automotive Standard

No

Halogen-free

TrenchFET® Power MOSFET

100 % Rg Tested

APPLICATIONS

Load Switching for Portable Devices

DC/DC Converter