N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK Infineon IRFR8314TRPBF
- RS Stock No.:
- 165-8287
- Mfr. Part No.:
- IRFR8314TRPBF
- Manufacturer:
- Infineon
Subtotal (1 reel of 2000 units)**
€1,188.00
(exc. VAT)
€1,462.00
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Reel** |
|---|---|---|
| 2000 + | €0.594 | €1,188.00 |
**price indicative
- RS Stock No.:
- 165-8287
- Mfr. Part No.:
- IRFR8314TRPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 179 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 36 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Width | 7.49mm | |
| Height | 2.39mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 179 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 36 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Width 7.49mm | ||
Height 2.39mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||