Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	25 A
	Maximum Drain Source Voltage	100 V
	Package Type	PQFN
	Mounting Type	Surface Mount
	Pin Count	12
	Maximum Drain Source Resistance	35 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	2.1 W
	Transistor Configuration	Series
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Length	5.1mm
	Maximum Operating Temperature	+150 °C
	Width	3.4mm
	Number of Elements per Chip	2
	Transistor Material	Si
	Series	PowerTrench
	Minimum Operating Temperature	-55 °C
	Height	0.75mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 25 A
	Maximum Drain Source Voltage 100 V
	Package Type PQFN
	Mounting Type Surface Mount
	Pin Count 12
	Maximum Drain Source Resistance 35 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 2.1 W
	Transistor Configuration Series
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Length 5.1mm
	Maximum Operating Temperature +150 °C
	Width 3.4mm
	Number of Elements per Chip 2
	Transistor Material Si
	Series PowerTrench
	Minimum Operating Temperature -55 °C
	Height 0.75mm

COO (Country of Origin):: MY

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Dual N-Channel MOSFET, 25 A, 100 V, 12-Pin PQFN onsemi FDMD82100

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor