N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 Nexperia BSH111BKR

RS Stock No.:: 170-5339
Mfr. Part No.:: BSH111BKR
Manufacturer:: Nexperia

N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 Nexperia BSH111BKR

1200 In stock for delivery within 2 working days

Added

Price Each (In a Pack of 100)

€0.035

(exc. VAT)

€0.043

(inc. VAT)

Units	Per unit	Per Pack*
100 +	€0.035	€3.50
*price indicative

RS Stock No.:: 170-5339
Mfr. Part No.:: BSH111BKR
Manufacturer:: Nexperia

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	335 mA
Maximum Drain Source Voltage	55 V
Series	BSH111BK
Package Type	TO-236
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	8.1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.3V
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	1.45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	10 V
Width	1.4mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	0.5 nC @ 4.5 V
Length	3mm
Minimum Operating Temperature	-55 °C
Height	1mm

RS Stock No.:: 170-5339
Mfr. Part No.:: BSH111BKR
Manufacturer:: Nexperia