P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRF7424 is 30V single P-channel HEXFET power MOSFET in a SO-8 package. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

RoHS compliant
Industry-leading quality
Industry-standard Pinout
P-channel MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	International Rectifier
	Channel Type	P
	Maximum Continuous Drain Current	11 A
	Maximum Drain Source Voltage	30 V
	Series	IRF7424PbF
	Package Type	SO-8
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	22 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	20 V
	Typical Gate Charge @ Vgs	75 nC @ 10 V
	Length	5mm
	Width	4mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Height	1.5mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand International Rectifier
	Channel Type P
	Maximum Continuous Drain Current 11 A
	Maximum Drain Source Voltage 30 V
	Series IRF7424PbF
	Package Type SO-8
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 22 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage 20 V
	Typical Gate Charge @ Vgs 75 nC @ 10 V
	Length 5mm
	Width 4mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Height 1.5mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

International Rectifier IRF7424PbF P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF

P-Channel Power MOSFET 30V, Infineon

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