NVMFS5C673NLWFAFT1G N-Channel MOSFET, 50 A, 60 V NVMFS5C673NL, 5-Pin DFN ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications.

Low RDS(on)
Minimize Conduction Losses
Low QG and Gate capacitance
Minimize Switching Losses
Industry standard 5x6mm package Industry
Compact Design and Standard footprint for direct drop-in
Best in-class FOM (RDS(ON) x QG)
Increased efficiency, lower power dissipation
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
a Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 50 A
Maximum Drain Source Voltage 60 V
Package Type DFN
Mounting Type Surface Mount
Pin Count 5
Maximum Drain Source Resistance 13 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 46 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Length 6.1mm
Height 1.05mm
Forward Diode Voltage 1.2V
Width 5.1mm
Maximum Operating Temperature +175 °C
Automotive Standard AEC-Q101
Typical Gate Charge @ Vgs 9.5 nC @ 10 V
Series NVMFS5C673NL
1120 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 20)
0.733
(exc. VAT)
0.902
(inc. VAT)
units
Per unit
Per Pack*
20 - 80
€0.733
€14.66
100 - 480
€0.672
€13.44
500 +
€0.62
€12.40
*price indicative
Packaging Options:
Related Products
RD3L050SN is a Power MOSFET with Low on ...
Description:
RD3L050SN is a Power MOSFET with Low on - resistance, suitable for Switching. Low on-resistance.Fast switching speed.Drive circuits can be simple.Parallel use is easy.Pb-free plating.
Automotive Power MOSFET in a 5x6mm flat lead ...
Description:
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications. Small Footprint (5x6 mm)Compact ...
Small Footprint (5x6 mm) for Compact Design Low ...
Description:
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesNVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical InspectionPPAP Capable These Devices are Pb−Free
The MegaFET process, which uses feature sizes approaching ...
Description:
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance