Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN onsemi NVMFD5C650NLWFT1G

RS Stock No.:: 172-3345
Mfr. Part No.:: NVMFD5C650NLWFT1G
Manufacturer:: onsemi

Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN onsemi NVMFD5C650NLWFT1G

Temporarily out of stock - back order for despatch 23-05-2025, delivery within 2 working days

Added

Price Each (In a Pack of 10)

€3.735

(exc. VAT)

€4.594

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	€3.735	€37.35
100 - 240	€3.047	€30.47
250 - 490	€2.966	€29.66
500 - 990	€2.891	€28.91
1000 +	€2.82	€28.20
*price indicative

RS Stock No.:: 172-3345
Mfr. Part No.:: NVMFD5C650NLWFT1G
Manufacturer:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	111 A
Maximum Drain Source Voltage	60 V
Series	NVMFD5C650NL
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	5.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	125 W
Maximum Gate Source Voltage	±20 V
Typical Gate Charge @ Vgs	37 nC @ 10 V
Length	6.1mm
Maximum Operating Temperature	+175 °C
Width	5.1mm
Number of Elements per Chip	2
Minimum Operating Temperature	-55 °C
Height	1.05mm
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.2V

RS Stock No.:: 172-3345
Mfr. Part No.:: NVMFD5C650NLWFT1G
Manufacturer:: onsemi