NVTFS6H850NTAG N-Channel MOSFET, 68 A, 80 V NVTFS6H850N, 8-Pin WDFN ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 68 A
Maximum Drain Source Voltage 80 V
Package Type WDFN
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 9.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 107 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Length 3.15mm
Forward Diode Voltage 1.2V
Width 3.15mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 19 nC @ 10 V
Automotive Standard AEC-Q101
Height 0.75mm
Series NVTFS6H850N
Maximum Operating Temperature +175 °C
750 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 25)
0.69
(exc. VAT)
0.85
(inc. VAT)
units
Per unit
Per Pack*
25 - 25
€0.69
€17.25
50 - 75
€0.656
€16.40
100 - 225
€0.528
€13.20
250 - 475
€0.502
€12.55
500 +
€0.463
€11.575
*price indicative
Packaging Options:
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