N-Channel MOSFET, 300 mA, 60 V, 3-Pin TO-92 Microchip VN2106N3-G
- RS Stock No.:
- 177-9724
- Mfr. Part No.:
- VN2106N3-G
- Manufacturer:
- Microchip
Temporarily out of stock - back order for despatch when stock is available
Added
Price Each (In a Pack of 25)
€0.39
(exc. VAT)
€0.48
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 75 | €0.39 | €9.75 |
| 100 + | €0.358 | €8.95 |
| *price indicative | ||
- RS Stock No.:
- 177-9724
- Mfr. Part No.:
- VN2106N3-G
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Series | VN2106 |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 6 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.4V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Width | 4.06mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 5.08mm |
| Height | 5.33mm |
| Forward Diode Voltage | 1.8V |
| Minimum Operating Temperature | -55 °C |