IRLD110PBF N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay

  • RS Stock No. 178-0913
  • Mfr. Part No. IRLD110PBF
  • Manufacturer Vishay
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 540 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -10 V, +10 V
Package Type HVMDIP
Mounting Type Through Hole
Pin Count 4
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 1.3 W
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 6.1 nC @ 5 V
Height 3.37mm
Maximum Operating Temperature +175 °C
Width 6.29mm
Transistor Material Si
Length 5mm
1100 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 100)
0.571
(exc. VAT)
0.702
(inc. VAT)
units
Per unit
Per Tube*
100 +
€0.571
€57.10
*price indicative