SQD40031EL_GE3 P-Channel MOSFET, 100 A, 30 V TrenchFET, 3 + Tab-Pin DPAK Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

Attribute Value
Channel Type P
Maximum Continuous Drain Current 100 A
Maximum Drain Source Voltage 30 V
Package Type TO-252
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 136 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 186 nC @ 10 V
Minimum Operating Temperature -55 °C
Series TrenchFET
Maximum Operating Temperature +175 °C
Width 2.38mm
Forward Diode Voltage 1.5V
Transistor Material Si
Height 6.22mm
Length 6.73mm
Temporarily out of stock - back order for despatch 30-06-2020, delivery within 2 working days
Unit of sale: Each (On a Reel of 2000)
(exc. VAT)
(inc. VAT)
Per unit
Per Reel*
2000 +
*price indicative
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