N-Channel MOSFET, 67 A, 120 V, 8-Pin PQFN 5 x 6 onsemi FDMS4D0N12C

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design


Applications:
This product is general usage and suitable for many different applications.
End Products:
AC-DC and DC-DC Power Supplies