Dual N-Channel MOSFET, 68 A, 60 V, 8-Pin DFN onsemi NVMFD5C668NLT1G
- RS Stock No.:
- 178-4503
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Manufacturer:
- onsemi
1500 In stock for delivery within 2 working days
Added
Price Each (In a Pack of 10)
€2.448
(exc. VAT)
€3.011
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 90 | €2.448 | €24.48 |
| 100 - 240 | €1.919 | €19.19 |
| 250 - 490 | €1.87 | €18.70 |
| 500 - 990 | €1.821 | €18.21 |
| 1000 + | €1.777 | €17.77 |
| *price indicative | ||
- RS Stock No.:
- 178-4503
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 68 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 6.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 57.5 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 9.8 nC @ 4.5 V |
| Length | 5.1mm |
| Maximum Operating Temperature | +175 °C |
| Width | 6.1mm |
| Height | 1.05mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
- RS Stock No.:
- 178-4503
- Mfr. Part No.:
- NVMFD5C668NLT1G
- Manufacturer:
- onsemi