FGY75T120SQDN N-Channel MOSFET Depletion, 3-Pin TO-247 ON Semiconductor

Technical data sheets
Legislation and Compliance
Non Compliant
COO (Country of Origin): CN
Product Details

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
UPS
End Products
Industrial

Specifications
Attribute Value
Channel Type N
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Channel Mode Depletion
Maximum Gate Threshold Voltage 6.5V
Minimum Gate Threshold Voltage 4.5V
Maximum Power Dissipation 790 W
Transistor Configuration Single
Number of Elements per Chip 1
Forward Diode Voltage 4V
Length 15.87mm
Minimum Operating Temperature -55 °C
Width 4.82mm
Height 20.82mm
Maximum Operating Temperature +175 °C
Typical Gate Charge @ Vgs 399
103 In stock for delivery within 2 working days
Unit of sale: Each
8.47
(exc. VAT)
10.42
(inc. VAT)
units
Per unit
1 - 9
€8.47
10 - 24
€7.67
25 - 99
€6.99
100 - 249
€6.09
250 +
€5.80
Packaging Options: