Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS60DN-T1-GE3

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Subtotal (1 pack of 10 units)*

€12.01

(exc. VAT)

€14.77

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90€1.201€12.01
100 - 240€1.081€10.81
250 - 490€0.996€9.96
500 - 990€0.938€9.38
1000 +€0.781€7.81

*price indicative

Packaging Options:
RS Stock No.:
188-5094
Mfr. Part No.:
SISS60DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

181.8A

Maximum Drain Source Voltage Vds

30V

Series

SiSS60DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.01mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

57nC

Forward Voltage Vf

0.68V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.8W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Width

3.3 mm

Length

3.3mm

Standards/Approvals

No

Height

0.78mm

Automotive Standard

No

Distrelec Product Id

304-32-536

N-Channel 30 V (D-S) MOSFET with Schottky Diode.

TrenchFET® Gen IV power MOSFET

SKYFET® with monolithic Schottky diode

Optimized RDS x Qg and RDS x Qgd FOM enable higher efficiency for high frequency switching

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